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Thu1230 StefanovichGB

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Information about Thu1230 StefanovichGB
Education

Published on March 3, 2008

Author: Michelino

Source: authorstream.com

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Interaction of plasma, electronic and photon flows with the surfaces of solids:  Interaction of plasma, electronic and photon flows with the surfaces of solids Staff:  Staff Professors and researchers: Stefanovich G. Ph.D Boriskov P. Ph.D Velichko A. Ph.D Kazakova E. Ph.D Pergament A. Ph.D Podgornii V. Ph.D Post-graduate students: Kuldin N.; Putrolinen V. Students: Vlasov F. 5 Melekhova A. 5 Cheremisin A. 5 Sergantov D. 5 Manuilov S. 5 Brikina Y. 4 Futrik I. 4 Research of deposition processes and modification of properties of transition metal oxide films :  Methods of deposition of the vanadium dioxide thin films (by reactive magnetron sputtering) are developed. The films exhibit metal-insulator transition and high sensitivity to corpuscular and photon effects. The lithographic process on the basis of inorganic oxide resist with resolution < 100 nm is developed for obtaining of a microrelief on silicon, silicon dioxide, vanadium and vanadium oxides. Research of deposition processes and modification of properties of transition metal oxide films Key parameters of the lithographic process :  Key parameters of the lithographic process Resolution < 100 nm, Sensitivity 10 C/cm2 (for electron-beam exposure), 0.5 mJ/cm2 (for optical exposure) High plasma- and heat stability allowing dry plasma-chemical development of the resist and etching of nano-structures. Slide5:  1m 1m 100nm Vanadium-oxide resist pattern on Si. Dose 75 C/sm2 Height of a step vanadium-oxide resist on Si. Study of physical properties of structures with transition metal oxide films. :  Study of physical properties of structures with transition metal oxide films. The following researches were carried out: 1.The electrical and optical control of dynamics of switching in structure Si-SiО2-VО2 was realized and investigated. Slide7:  Schematic diagrams of the Si-SiO2-VO2 of structure Slide8:  The dynamic current-voltage characteristics of the Si-SiO2-VO2 structure Study of physical properties of structures with transition metal oxide films.:  Study of physical properties of structures with transition metal oxide films. 2. The phenomena of chaotic dynamics in structures with VO2 are investigated. It is shown that such switching structures are the model circuits for study of a wide variety of the noise phenomena: a stochastic resonance, generation of noise, supervision of explosive noise. In some points of current-voltage characteristics the noise with features of the determined chaos is observed. Slide10:  Spectral density of fluctuations, voltage and phase portraits of fluctuations at various values of control parameter. Study of physical properties of structures with transition metal oxide films.:  Study of physical properties of structures with transition metal oxide films. 3.The action of an electrical field on metal - insulator transition is investigated. The opportunity of electronic switching of transition is shown. The theoretical model of action of a field on transition is developed. Slide12:  Dependence of transition temperature on an electric field Study of physical properties of structures with transition metal oxide films.:  Study of physical properties of structures with transition metal oxide films. 4. Termocromic effect in vanadium oxides is investigated. Action of the thermal and plasma treatments on optical properties of the films is shown. The regims of treatments, which replace the maximum optical contrast into yellow region of a spectrum are developed, that is optimal for display engineering. Slide14:  Shift of spectral dependence of reflection factor CVD synthesis carbon nanotubes:  CVD synthesis carbon nanotubes The technology of the plasma stimulation deposition of amorphous carbon layers with nanotubes are developed. CVD synthesis carbon nanotubes:  CVD synthesis carbon nanotubes CVD synthesis carbon nanotubes:  CVD synthesis carbon nanotubes Plasma modification of the shungit.:  Plasma modification of the shungit. The action of the arc plasma dischage on natural carboncontaning material - shungit is investigated. The modification of the initial carbon material under the action of plasma is shown. Depending on power dischage and gas environment, graphite, SiC, carbon compositions containing fullerens and carbon nanotubes are formed. The deposition of the diamondlike films is also possible, when the shungit target is sputtered. Publications:  Publications A.L. Pergament. Metal-insulator transitions and electronic switching. Larionov Press, Petrozavodsk, 2003. (monography) A.L. Pergament, G.B. Stefanovich, E.L. Kazakova, D.G. Stefanovich and A.A. Velichko. Thin Films of Amorphous and Hydrated Vanadium Oxides: Growth, Properties and Applications/ / Solid State Phenomena. – 2003. – V. 90-91. – p.p. 97-102. A.A. Velichko, N.A. Kuldin, G.B. Stefanovich, and A.L. Pergaent. Coontrolled Swithing Dynamics in Si-SiO2-VO2 Structures//Technical Physics Letters, -2003. -Vol.29, No.6, pp.507-509. Величко А.А., Стефанович Г.Б, Пергамент А.Л., Борисков П.П. Детерминированный шум в структурах на основе диоксида ванадия // ПЖТФ. – 2003. – Т.29. – Вып.10. – С.82 – 87. A. Pergament “Metal-insulator transition: the Mott criterion and coherence length” J. Phys.: Condensed Matter v.15, n.19, p.3217-3224. Стефанович Г.Б., Пергамент А.Л., Величко А.А., Стефанович Д.Г., Кулдин Н.А., Борисков П.П. Аморфный оксид ванадия – резист для нанолитографии // Сбор. Докл. 15-го Межд. Симпозиума «Тонкие пленки в оптике и электронике». Харьков. – 2003. – C. 263-267. Стефанович Г.Б., Пергамент А.Л., Стефанович Д.Г., Величко А.А., Кулдин Н.А., Борисков П.П. Получение нанокристаллических пленок ванадия и исследование их свойств // Сбор. Докл. 15-го Межд. Симпозиума «Тонкие пленки в оптике и электронике». Харьков. – 2003. – C. 77-81. Stefanovich G.B., Khakhaev A.D., Gurtov V.A., Velichko A.A., Pergament A.L., Kikalov D.O. Amorphous vanadium oxide: new material for integrated optics // Proceed. of the XXXVII annual conf. of the Finnish Phys. Society. March 20-22. Helsinki. Finland. – 2003. – P. 270. Stefanovich G.B., Velichko A.A., Pergament A.L., Stefanovich D.G., Kuldin N.A. Amorphous vanadium oxide: new resist material for nanolithography // Proceed. of the XXXVII annual conf. of the Finnish Phys. Society. March 20-22. Helsinki. Finland. – 2003. – P. 252. Ph.D. Thesis :  KAZAKOVA E. ELECTRONIC AND ION PROCESSES IN HYDRATED PENOXIDE OF VANADIUM VELICHKO A. SWITCHING IN THIN-FILM MICRO- AND NANOSTRUCTURE ON THE BASIS OF TRANSITION METALS OXIDES WITH METAL - ISOLATOR TRANSITION STEFANOVICH D. ELECTRONIC CONTROL OF METAL - ISOLATOR TRANSITION Ph.D. Thesis

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