OAtube Nanotechnology 1, 905 (2008)

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Information about OAtube Nanotechnology 1, 905 (2008)
Science-Technology

Published on September 5, 2008

Author: oatube

Source: authorstream.com

Tuning of InGaAs Dots : Tuning of InGaAs Dots F. Heinrichsdorff et al., 41th EMC St. Barbara (1999) Outline :  Outline Basic Concepts for Long Wavelength Emission QW overgrowth DWELL structures Growth Issues of MOVPE spacers in QD stacks the role of V/III ratio Roadmap for GaAs-based Long Wavelength Emission : Roadmap for GaAs-based Long Wavelength Emission Electronic Properties of QDs :  Electronic Properties of QDs Variation of QD Size and In/Ga Ratio : Variation of QD Size and In/Ga Ratio Large InAs/GaAs QDs : Large InAs/GaAs QDs Wavelength Tuning by QW Overgrowth : Wavelength Tuning by QW Overgrowth Example: QD Overgrowth with InGaAs QW : Example: QD Overgrowth with InGaAs QW Wavelength Tuning by QW Overgrowth Impact of QD Overgrowth : Impact of QD Overgrowth DWELL Structures : DWELL Structures Defects at Overgrown Dot Structures : Defects at Overgrown Dot Structures InGaAs/GaAs Dots in Gain Media : InGaAs/GaAs Dots in Gain Media Sample Structures : Sample Structures Limitation of QD stackability : Limitation of QD stackability 0 25 mm Growth Interruption after QD Deposition : Growth Interruption after QD Deposition QD LASER : QD LASER Roadmap for Further Improvements : Roadmap for Further Improvements QD-Emission Tuning : QD-Emission Tuning Laser Designed for 1300 nm Emission : Laser Designed for 1300 nm Emission Origin of Blue Shift : Origin of Blue Shift Maintain PL Efficiency : Maintain PL Efficiency Conclusion : Conclusion Overgrowth of In(Ga)As/GaAs dots with an InGaAs SRLis promising for reaching 1.30 mm emission with MOVPE Crucial issues to obtain 1.30 mm lasing are - the achievement of a high dot density (rQD, dspacer) - the suppression of emission blueshift during upper-cladding growth A low V/III ratio suppresses In-Ga interdiffusion

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