Lecture 3 oms

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Information about Lecture 3 oms

Published on April 15, 2014

Author: AllenHermann

Source: slideshare.net

Lecture III. . Transient and Steady-state Photoconductivity in Insulators, Theory and Experiment Small-signal limit Drift Mobility Trapping (shallow and deep)

Transient photoconductivity- determination of the drift mobility

For an applied electric field constant in position and time, E=V/d, where V is the applied potential across the photoconductor, and d its thickness.

Let v be the drift velocity, and μ be the carrier mobility, so, by definition, μ=v/E When the carriers reach the back electrode (x=d), time is their-time- of-flight t. Then μ= (d/t)/(V/d)

Carrier Trapping

Shallow Traps

Deep Traps

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